PART |
Description |
Maker |
74LVT162245MEAX |
256K, 32K X 8, 2.5V SER EEPROM, -40C to 125C, 8-TSSOP, TUBE 位总线收发
|
Fairchild Semiconductor, Corp.
|
AT28C256-20UM/883 AT28C256F-20UM/883 AT28C256E-20U |
150NS, TSOP, IND TEMP, GREEN(EEPROM) 32K X 8 EEPROM 5V, 150 ns, PDSO28 256K (32K x 8) Paged Parallel EEPROM
|
聚兴科技股份有限公司 ATM Electronic, Corp. ATMEL Corporation
|
AT28BV256-20SU AT28BV25609 |
200NS, SOIC, IND TEMP, GREEN(EEPROM) 32K X 8 EEPROM 3V, 200 ns, PDSO28 256K (32K x 8) Battery-Voltage Parallel EEPROMs
|
Atmel, Corp. ATMEL Corporation
|
HN58V257A |
256k EEPROM (32-kword ×8-bit)(256k EEPROM (32k×8)
|
Hitachi,Ltd.
|
CAT28LV256HE30T CAT28LV256GA-25T CAT28LV256GA-30T |
32K X 8 EEPROM 3V, 250 ns, PQCC32 256K-Bit CMOS PARALLEL EEPROM
|
ON Semiconductor
|
28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
AT27C256 AT27C256R AT27C256R-12 AT27C256R-12JC AT2 |
256K 32K x 8 OTP CMOS EPROM 256K (128K x 8) OTP CMOS EPROM High-Speed CMOS Logic Phase-Locked Loop with VCO 16-SOIC -40 to 85 256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 120 ns, PDIP28 256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 90 ns, PDIP28 High-Speed CMOS Logic Phase-Locked Loop with VCO 16-SO -40 to 85 32K X 8 OTPROM, 70 ns, PQCC32 256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 70 ns, PDIP28 256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 120 ns, PDSO28 256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 70 ns, PQCC32 256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 55 ns, PDIP28 High-Speed CMOS Logic Phase-Locked Loop with VCO 16-SO -40 to 85 32K X 8 OTPROM, 70 ns, PDIP28 High-Speed CMOS Logic Phase-Locked Loop with VCO 16-TVSOP -40 to 85 High-Speed CMOS Logic Phase-Locked Loop with VCO 16-TSSOP -40 to 85 8-Channel Analog Multiplexer/Demultiplexer 16-SSOP -40 to 85
|
Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation] http://
|
25C320 24C320-EP 24C320-ESN 24C320-EST 24C320-IP 2 |
32K 5.0V SPI bus EEPROM 32K 5.0V SPI Bus Serial EEPROM 32K.0V SPI总线串行EEPROM 32K5.0VSPIBusSerialEEPROM 32K 5.0V SPI Bus Serial EEPROM Memory
|
Microchip Technology, Inc. Microchip Technology Inc. MicrochipTechnology MICROCHIP[Microchip Technology]
|
27C256 27C256-10 27C256-10EL 27C256-10EP 27C256-10 |
256K (32K x 8) CMOS EPROM 256K (32K x 8) CMOS EPROM 256K2K的8)的CMOS存储 DIODE SCHOTTKY 150V 60A TO247AC CAPACITOR 1500UF 80V ELECT TSHA CAP 270UF 400V ELECT TS-ED From old datasheet system 256K (32x8) CMOS EPROM
|
YEONHO Electronics Co., Ltd. Microchip Technology, Inc. Microchip Technology Inc. MICROCHIP[Microchip Technology]
|
CAT28LV256H13I-20T CAT28LV256H13I-25 CAT28LV256H13 |
256 kb Parallel EEPROM 32K X 8 EEPROM 3V, 200 ns, PDSO28 256 kb Parallel EEPROM 32K X 8 EEPROM 3V, 250 ns, PDSO28 256 kb Parallel EEPROM 32K X 8 EEPROM 3V, 300 ns, PDSO28
|
ON Semiconductor
|
LH52256C-10LL LH525CL9 |
256K SRAM CMOS 256K (32K x8) Static RAM(CMOS 256K (32K x8) 静态RAM) 的CMOS 256K2K的8)静态RAM(的CMOS 256K2K的8)静态的RAM
|
Sharp Electrionic Compo... Sharp Electrionic Components Sharp, Corp.
|